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1.2V Drive Pch MOSFET
RZE002P02
Structure Silicon P-channel MOSFET Features 1) High speed switching. 2) Small package (EMT3). 3) 1.2V drive.
0.2 0.5 0.5
Dimensions (Unit : mm)
EMT3
1.6 0.3
(3)
0.7 0.55
0.8
(2) (1)
1.6
0.2
0.15
Applications Switching Package specifications
Package Type RZE002P02 Code Basic ordering unit (pieces) Taping TL 3000
1.0
(1)Source (2)Gate (3)Drain Abbreviated symbol : YK
Inner circuit
(3)
2 (2) 1 (1) 1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Source (2) Gate (3) Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Souce current (Body diode) Total power dissipation Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg
Limits -20 10 200 800 -100 -800 150 150 -55 to +150
Unit V V mA mA mA mA mW C C
Thermal resistance
Parameter Channel to ambient
Each terminal mounted on a recommended land
Symbol Rth(ch-a)
Limits 833
Unit C/W
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1/4
2009.06 - Rev.A
0.1Min.
RZE002P02
Electrical characteristics (Ta=25C)
Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -20 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -0.3 - - Static drain-source on-state RDS (on) - resistance - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

0.2 - - - - - - - - - -
Typ. - - - - 0.8 1.0 1.3 1.6 2.4 - 115 10 6 6 4 17 17 1.4 0.3 0.3
Max. 10 - -1 -1.0 1.2 1.5 2.2 3.5 9.6 - - - - - - - - - - -
Unit A V A V S pF pF pF ns ns ns ns nC nC nC
Conditions VGS= 10V, VDS=0V ID= -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, ID= -100A ID= -200mA, VGS= -4.5V ID= -100mA, VGS= -2.5V ID= -100mA, VGS= -1.8V ID= -40mA, VGS= -1.5V ID= -10mA, VGS= -1.2V VDS= -10V, ID= -200mA VDS= -10V VGS= 0V f=1MHz VDD -10V ID= -100mA VGS= -4.5V RL 100 RG= 10
VDD -10V RL 50 ID= -200mA RG= 10 VGS= -4.5V
Body diode characteristics (Source-drain)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. -1.2
Unit V
Conditions IS= -200mA, VGS=0V
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2/4
2009.06 - Rev.A
RZE002P02
Electrical characteristics curves
0.2 VGS= -10V VGS= -4.5V VGS= -3.2V Ta=25C Pulsed DRAIN CURRENT : -ID [A] 0.2 VGS= -4.5V 0.15 VGS= -2.5V VGS= -1.8V VGS= -1.5V VGS= -1.2V Ta=25C Pulsed DRAIN CURRENT : -ID [A] 1 VDS= -10V Pulsed
Data Sheet
DRAIN CURRENT : -ID [A]
0.15
0.1 Ta= 125C 0.01 Ta= 75C Ta= 25C Ta= - 25C
0.1 VGS= -1.5V 0.05 VGS= -1.2V 0 0 0.2 0.4 0.6
VGS= -2.5V VGS= -2.0V VGS= -1.8V
0.1
0.05 VGS= -1.0V 0
0.001
VGS= -1.0V
0.0001 0 2 4 6 8 10 0 0.5 1 1.5
0.8
1
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics()
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics()
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
10000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
Ta=25C Pulsed
10000
VGS= -4.5V Pulsed
10000 Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= -2.5V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
1000 VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 0.001 0.01 0.1 1
1000
1000
100 0.001
0.01
0.1
1
100 0.001
0.01
0.1
1
DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
10000
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
VGS= -1.8V Pulsed
10000
VGS= -1.5V Pulsed
10000
VGS= -1.2V Pulsed
1000
1000 Ta=125C Ta=75C Ta=25C Ta= -25C
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
100 0.001
0.01
0.1
1
100 0.001
0.01 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current()
0.1
100 0.001
0.01 DRAIN-CURRENT : -ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current()
0.1
DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current()
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3/4
2009.06 - Rev.A
RZE002P02
FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1.0 1 REVERSE DRAIN CURRENT : -Is [A] 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[]
Data Sheet
VDS= -10V Pulsed
VGS=0V Pulsed
Ta=25C Pulsed
4 ID = -0.2A 3 ID = -0.01A 2
Ta=-25C Ta=25C Ta=75C Ta=125C
0.1
Ta=125C Ta=75C Ta=25C Ta=-25C
1
0.1 0.01
0.01 0.1 DRAIN-CURRENT : -ID [A] Fig.10 Forward Transfer Admittance vs. Drain Current 1 0 0.5 1 1.5
0 0 2 4 6 8 10
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage
1000 td(off) SWITCHING TIME : t [ns] 100 tf
GATE-SOURCE VOLTAGE : -VGS [V]
4
CAPACITANCE : C [pF]
Ta=25C VDD = -10V VGS=-4.5V R G=10 Pulsed
5
1000
Ta=25C f=1MHz VGS=0V
Ciss
100
3
2 Ta=25C VDD = -10V VGS=-0.2V RG=10 Pulsed 0 0.5 1 1.5
10
10 Coss Crss 1 0.01 0.1 1 10 100
1
1 0.01
tr
td(on) 0.1 DRAIN-CURRENT : -ID [A] 1
0
TOTAL GATE CHARGE : Qg [nC] Fig.14 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Typical Capacitance vs. Drain-Source Voltage
Fig.13 Switching Characteristics
Measurement circuit
Pulse Width
VGS ID RL D.U.T. RG VDD VDS
VGS
10% 50% 10%
90%
50% 10% 90%
VDS
90% td(on) ton tr td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
VGS ID RL IG(Const.) RG D.U.T. VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment.
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4/4
2009.06 - Rev.A
Notice
Notes
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